Comprehensive Study of Electrode Effect in Metal/CuInP2S6/Metal Heterostructures

The layered van der Waals CuInP2S6 (CIPS) features interesting functional behaviors, including reversible ferroelectric polarization, Cu ion migration, negative capacitance effect, etc. Here, the CIPS flakes were exfoliated from the CVT-grown high-quality single crystals, which were fabricated into...

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Bibliographic Details
Published in:Symmetry (Basel) 2023-04, Vol.15 (5), p.966
Main Authors: Dong, Yong, An, Chao, Wu, Yongyi, Zhang, Zhen, Li, Tao, Min, Tai, Yang, Jinbo, Chen, Xuegang, Tian, Mingliang
Format: Article
Language:English
Subjects:
copper migration
Crystal growth
Electric potential
Electrode polarization
Electrodes
Electrons
Ferroelectric materials
ferroelectric polarization
Ferroelectricity
Flakes
Heterostructures
Interfaces
Ion migration
Linear polarization
Memory devices
metal electrode
Microscopy
Migration
Photolithography
Single crystals
Spectrum analysis
van der Waals CuInP2S6
Voltage
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Summary:The layered van der Waals CuInP2S6 (CIPS) features interesting functional behaviors, including reversible ferroelectric polarization, Cu ion migration, negative capacitance effect, etc. Here, the CIPS flakes were exfoliated from the CVT-grown high-quality single crystals, which were fabricated into metal/CIPS/metal heterostructures by conventional photolithography. It was found that the CIPS flakes persisted in the dominant out-of-plane polarization and the minor in-plane polarization. Clear hysteresis current–voltage (I–V) loops, as well as the rectifying character, were revealed in metal/CIPS/metal heterostructures, indicating the potential application as a memory device. Additionally, the different metal electrode could significantly modulate the Schottky-like barrier at metal/CIPS interfaces, resulting in symmetric or asymmetric I–V loops. The complicated I–V curves may have originated from the voltage-induced Cu ion migration, reversible ferroelectric polarization, and carrier (ion) trapping/detrapping. This work may facilitate the metal electrode selection for the ferroelectric CIPS-based device application.
ISSN:2073-8994
2073-8994
DOI:10.3390/sym15050966