A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capa...

Full description

Saved in:
Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2015-09, Vol.15 (9), p.24257-24268
Main Authors: Xie, Bo, Xing, Yonghao, Wang, Yanshuang, Chen, Jian, Chen, Deyong, Wang, Junbo
Format: Article
Language:English
Subjects:
anodic bonding
Devices
differential frequency output
Electrochemical Techniques
Electrodes
Electrostatics
Equipment Design
Error detection
Frequency drift
Glass - chemistry
mask-free metallization
Metals - chemistry
Microtechnology - instrumentation
Nonlinearity
Packaging
Patterning
Pressure
resonant pressure sensor
Resonators
Silicon - chemistry
Temperature
Vacuum
vacuum packaging
wire interconnection
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months), a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.
ISSN:1424-8220
1424-8220
DOI:10.3390/s150924257