Comparison of ZnO, Al2O3, AlZnO, and Al2O3-Doped ZnO Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structures

In this study, ZnO, AlZnO, Al2O3, and Al2O3-doped ZnO-sensing membranes were fabricated in electrolyte–insulator–semiconductor (EIS) structures. Multiple material analyses indicate that annealing at an appropriate temperature of 500 °C could enhance crystallizations, passivate defects, and facilitat...

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Bibliographic Details
Published in:Membranes (Basel) 2022-01, Vol.12 (2), p.168
Main Authors: Kao, Chyuan-Haur, Liu, Yi-Wen, Kuo, Chih-Chen, Chan, Shih-Ming, Wang, Deng-Yi, Lin, Ya-Hsuan, Lee, Ming-Ling, Chen, Hsiang
Format: Article
Language:English
Subjects:
Al concentration
Al2O3
Aluminum oxide
Annealing
Crystal defects
Crystals
defects
Dielectric properties
Electric fields
Electrolytes
Material properties
Membranes
sensing membranes
Sensors
Silicon wafers
Surface roughness
Zinc oxide
ZnO
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Summary:In this study, ZnO, AlZnO, Al2O3, and Al2O3-doped ZnO-sensing membranes were fabricated in electrolyte–insulator–semiconductor (EIS) structures. Multiple material analyses indicate that annealing at an appropriate temperature of 500 °C could enhance crystallizations, passivate defects, and facilitate grainizations. Owing to their material properties, both the pH-sensing capability and overall reliability were optimized for these four types of membranes. The results also revealed that higher Al amounts increased the surface roughness values and enhanced larger crystals and grains. Higher Al compositions resulted in higher sensitivity, linearity, and stability in the membrane.
ISSN:2077-0375
2077-0375
DOI:10.3390/membranes12020168