Low temperature recombination luminescence of Mg3Y2Ge3O12:Tb3

• Published in: Optical materials. X 2024-12, Vol.24, p.100368, Article 100368
• Main Authors: Rogulis, U., Fedotovs, A., Berzins, Dz, Krieke, G., Skuja, L., Antuzevics, A.
• Format: Article
• Language: English
• Subjects: Afterglow; Electron paramagnetic resonance; Mg3Y2Ge3O12:Tb3; Paramagnetic centres; Photoluminescence; Recombination mechanism
• ISSN: 2590-1478; 2590-1478
• DOI: 10.1016/j.omx.2024.100368

A study was conducted to examine the recombination processes in persistent phosphor Mg3Y2Ge3O12:Tb3+ garnet at low temperatures. Photoluminescence (PL), recombination luminescence (RL), electron paramagnetic resonance (EPR), and EPR detected by PL or RL were measured. In samples with low Tb3+ concentration, a broad PL and RL band around 400–450 nm and characteristic Tb3+ lines were observed. However, in samples with high Tb3+ concentration, only Tb3+ lines were present. Both the broad-band and the line components exhibit long-lasting tunneling luminescence with hyperbolic decay. After 263 nm UV irradiation signals of intrinsic electron (F-type) and hole (V-type) trapping centres were observed in the EPR spectra. Such signals were also observed in RL-detected EPR spectra, indicating that the broad RL band at low Tb3+ concentrations originates from tunneling recombination between these intrinsic traps. At high Tb3+ concentrations, the RL-EPR spectrum was not observed, suggesting that intrinsic electron and Tb-related hole trapping centres probably participate in the tunneling recombination. •Mg3Y2Ge3O12:Tb3+ exhibits UV-induced afterglow at low temperatures•Luminescence spectra consist of Tb3+ emission lines and a broad luminescence band•Broadband afterglow originates from tunnelling recombination of F- and V-type centres