Thickness Effect on Operational Modes of ZnGa2O4 MOSFETs

The device mechanism from depletion to enhancement mode for ZnGa 2 O 4 metal-oxide semiconductor field effect transistors (MOSFETs) grown on the sapphire substrate by metalorganic chemical-vapor deposition was studied. It was found that the thickness of the ZnGa 2 O 4 thin-film would affect the oper...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2018, Vol.6, p.432-437
Main Authors: Cheng, Li-Chung, Huang, Chiung-Yi, Horng, Ray-Hua
Format: Article
Language:English
Subjects:
breakdown voltage
Chemical vapor deposition
Current measurement
Depletion
Electrical properties
enhancement mode
Field effect transistors
Logic gates
Metal oxide semiconductors
MOSFET
MOSFETs
Organic chemistry
Sapphire
Semiconductor devices
Substrates
Thickness
thickness effect
Thin film transistors
Threshold voltage
Transistors
Voltage measurement
ZnGa₂O
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Summary:The device mechanism from depletion to enhancement mode for ZnGa 2 O 4 metal-oxide semiconductor field effect transistors (MOSFETs) grown on the sapphire substrate by metalorganic chemical-vapor deposition was studied. It was found that the thickness of the ZnGa 2 O 4 thin-film would affect the operational mode of the MOSFETs. Under the low-voltage operation (V DS = 0.5 V), the transistors exhibited a high on/off ratio from 10 7 to 10 4 , low subthreshold swing from 150 to 330 mV/dec, high field-effect mobility from 4.2 to 0.054 cm 2 /V-s and threshold voltages from -17.8 to 4.1 V (using constant current = 1 nA). These electrical properties all depend on the thickness of the ZnGa 2 O 4 thin-film transistors. Finally, the e-mode ZnGa 2 O 4 thin-film transistor with off-state breakdown voltage over 400 V is fabricated.
ISSN:2168-6734
DOI:10.1109/JEDS.2018.2803078