Ultrathin high-κ antimony oxide single crystals

Ultrathin oxides have been reported to possess excellent properties in electronic, magnetic, optical, and catalytic fields. However, the current and primary approaches toward the preparation of ultrathin oxides are only applicable to amorphous or polycrystalline oxide nanosheets or films. Here, we s...

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Bibliographic Details
Published in:Nature communications 2020-05, Vol.11 (1), p.2502-2502, Article 2502
Main Authors: Yang, Kena, Zhang, Tao, Wei, Bin, Bai, Yijia, Jia, Shuangfeng, Cao, Guanghui, Jiang, Renhui, Zhang, Chunbo, Gao, Enlai, Chang, Xuejiao, Li, Juntao, Li, Simo, Zhu, Daming, Tai, Renzhong, Zhou, Hua, Wang, Jianbo, Zeng, Mengqi, Wang, Zhongchang, Fu, Lei
Format: Article
Language:English
Subjects:
119/118
140/133
147/136
147/137
147/28
147/3
639/925/357/1018
Antimony
Antimony oxides
Chemical vapor deposition
Crystals
Dielectric breakdown
Dielectric constant
Electric potential
Electronic devices
Electronic equipment
Humanities and Social Sciences
INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Magnetic properties
multidisciplinary
Nanostructure
Optical properties
Oxides
Permittivity
Science
Science (multidisciplinary)
Single crystals
Substrates
Voltage
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Summary:Ultrathin oxides have been reported to possess excellent properties in electronic, magnetic, optical, and catalytic fields. However, the current and primary approaches toward the preparation of ultrathin oxides are only applicable to amorphous or polycrystalline oxide nanosheets or films. Here, we successfully synthesize high-quality ultrathin antimony oxide single crystals via a substrate-buffer-controlled chemical vapor deposition strategy. The as-obtained ultrathin antimony oxide single crystals exhibit high dielectric constant (~100) and large breakdown voltage (~5.7 GV m −1 ). Such a strategy can also be utilized to fabricate other ultrathin oxides, opening up an avenue in broadening the applicaitons of ultrathin oxides in many emerging fields. The ultrathin oxide nanosheets obtained through previous approaches usually exhibit amorphism or polycrystallinity, which limit their properties towards electronic devices. Here, the authors synthesize ultrathin antimony oxide single crystals with high dielectric constant (~100) and large breakdown voltage (~5.7 GV m −1 ).
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-020-16364-9