Properties of Single Crystal Silicon Doped with Vanadium

The paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Rela...

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Published in:East European journal of physics 2024-03 (1), p.366-369
Main Authors: Daliev, Khojakbar S., Khusanov, Zafarjon M.
Format: Article
Language:English
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carbon
diffusion
optically active
oxygen
resistivity
silicon
vanadium
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Khusanov, Zafarjon M.
description The paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Relative resistance, charge carrier concentration, mobility, and concentration of optically active oxygen and carbon in the samples were determined layer-by-layer. It is shown that in silicon samples doped with vanadium the concentration of optically active oxygen atoms tends to reduce.
doi_str_mv 10.26565/2312-4334-2024-1-35
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subjects carbon
diffusion
optically active
oxygen
resistivity
silicon
vanadium
title Properties of Single Crystal Silicon Doped with Vanadium
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