A High-Voltage-Isolated MEMS Quad-Solenoid Transformer with Specific Insulation Barriers for Miniaturized Galvanically Isolated Power Applications

The paper reports on high voltage (HV)-isolated MEMS quad-solenoid transformers for compact isolated gate drivers and bias power supplies. The component is wafer-level fabricated via a novel MEMS micro-casting technique, where the tightly coupled quad-solenoid chip consists of monolithically integra...

Full description

Saved in:
Bibliographic Details
Published in:Micromachines (Basel) 2024-01, Vol.15 (2), p.228
Main Authors: Chen, Changnan, Pan, Pichao, Gu, Jiebin, Li, Xinxin
Format: Article
Language:English
Subjects:
Bias
Coils (windings)
Design
Efficiency
Electric power supplies
Electric transformers
Electric vehicles
Electromagnetic coupling
Gallium nitrate
galvanic isolation
High voltages
Inductance
Magnetic cores
MEMS micro-casting technique
Metal oxide semiconductor field effect transistors
micro-transformer
monolithic integration
Nitrides
Permeability
Plating
power supply on chip
Power transfer
Semiconductors
Silicon
Silicon carbide
Silicon dioxide
Solenoids
Transformers
Transistors
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The paper reports on high voltage (HV)-isolated MEMS quad-solenoid transformers for compact isolated gate drivers and bias power supplies. The component is wafer-level fabricated via a novel MEMS micro-casting technique, where the tightly coupled quad-solenoid chip consists of monolithically integrated 3D inductive coils and an inserted ferrite magnetic core for high-efficiency isolated power transmission through electromagnetic coupling. The proposed HV-isolated transformer demonstrates a high inductance value of 743.2 nH, along with a small DC resistance of only 0.39 Ω in a compact footprint of 6 mm , making it achieve a very high inductance integration density (123.9 nH/mm ) and the ratio of (1906 nH/Ω). More importantly, with embedded ultra-thick serpentine-shaped (S-shaped) SiO isolation barriers that completely separate the primary and secondary windings, an over 2 kV breakdown voltage is obtained. In addition, the HV-isolated transformer chips exhibit a superior power transfer efficiency of over 80% and ultra-high dual-phase saturation current of 1.4 A, thereby covering most practical cases in isolated, integrated bias power supplies such as high-efficiency high-voltage-isolated gate driver solutions.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi15020228