Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes

Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diod...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2022-01, Vol.12 (1), p.154
Main Authors: Wen, Ming-Ru, Yang, Sheng-Hsiung, Chen, Wei-Sheng
Format: Article
Language:English
Subjects:
Brightness
Cadmium selenide
Carrier injection
Charge transport
Copper
copper thiocyanate
Current efficiency
Doping
Efficiency
Fabrication
Glass substrates
hole injection layer
Hole mobility
Injection
Light emitting diodes
light-emitting diode
Metal oxides
Mobility
molecular doping
Optoelectronic devices
quantum dot
Quantum dots
Tetracyanoquinodimethane
Thin films
Thiocyanates
Zinc oxides
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Summary:Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m and a current efficiency of 35.1 cd A from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano12010154