High-Aspect Ratio β -Ga₂O₃ Nanorods via Hydrothermal Synthesis

High-aspect ratio -Ga₂O₃ nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio -Ga₂O₃ nanorods was attributed to the oriented attachment m...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2018-08, Vol.8 (8), p.594
Main Authors: Bae, Hyun Jeong, Yoo, Tae Hee, Yoon, Youngbin, Lee, In Gyu, Kim, Jong Pil, Cho, Byung Jin, Hwang, Wan Sik
Format: Article
Language:English
Subjects:
Ga2O3
hydrothermal crystal growth
low dimensional structures
nanomaterials
nanorods
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Summary:High-aspect ratio -Ga₂O₃ nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio -Ga₂O₃ nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio -Ga₂O₃ nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of -Ga₂O₃ and expedite the integration of one-dimensional -Ga₂O₃ into future electronics, sensors, and optoelectronics.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano8080594