Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O3 treatment

•Ga2O3 + GaNx = 0.8 interface passivation layer is formed on GaN through UV/O3 treatment.•The physical and chemical properties of ultrathin interface layer are examined by HRTEM, STEM, EDX, and AFM.•The mechanism for the passivation of dislocation-related surface structures through UV/O3 treatment i...

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Bibliographic Details
Published in:Results in physics 2020-03, Vol.16, p.102964, Article 102964
Main Author: Kim, Kwangeun
Format: Article
Language:English
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Summary:•Ga2O3 + GaNx = 0.8 interface passivation layer is formed on GaN through UV/O3 treatment.•The physical and chemical properties of ultrathin interface layer are examined by HRTEM, STEM, EDX, and AFM.•The mechanism for the passivation of dislocation-related surface structures through UV/O3 treatment is discussed.•The improved conduction in GaN Schottky diode with the Ga2O3 + GaNx Schottky barrier is analyzed. Passivation capability of ultrathin Ga2O3 surface layer formed on GaN through ultraviolet/ozone (UV/O3) treatment is assessed with an exploration of conduction in GaN Schottky diode (SD). The physical and chemical features of ultrathin oxide layer are analyzed to examine the crystalline property. The passivation of dislocation-related structures by UV/O3 treatment improves the conduction in GaN SD.
ISSN:2211-3797
2211-3797
DOI:10.1016/j.rinp.2020.102964