Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (V th ) during switching was observed. This dynamic V th behavior of SFG device is because of the special device structure of SFG transistors. Based on the V th -pro...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2017-03, Vol.5 (2), p.117-121
Main Authors: Wu, Jun, Zhang, Lin-Qing, Yao, Yao, Lin, Min-Zhi, Ye, Zhi-Yuan, Wang, Peng-Fei
Format: Article
Language:English
Subjects:
dynamic threshold voltage
enhancement-mode GaN HEMT
Gallium nitride
HEMTs
Logic gates
Semi-floating gate
Switching circuits
Threshold voltage
Voltage measurement
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Summary:In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (V th ) during switching was observed. This dynamic V th behavior of SFG device is because of the special device structure of SFG transistors. Based on the V th -programmable behavior of the SFG transistor, a SFG-based GaN high electron mobility transistor was proposed and enhancement-mode was realized with writing-0 into the transistor during every switching operation by simulation.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2017.2647979