A new method of carrier density measurement using photocurrent maps of a 2D material Schottky diode

•Charge carrier density measurement using photocurrent maps of a 2D material Schottky diode.•A simple model of horizontal depletion width of the lateral metal-2D semiconductor Schottky junction.•Horizontal depletion width visually represented by photocurrent mapping.•Horizontal turn-on voltage as th...

Full description

Saved in:
Bibliographic Details
Published in:Results in physics 2021-02, Vol.21, p.103854, Article 103854
Main Authors: Ahn, Il-Ho, Ahn, Jongtae, Hwang, Do Kyung, Kim, Deuk Young
Format: Article
Language:English
Subjects:
Carrier concentration
Photocurrent mapping method
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•Charge carrier density measurement using photocurrent maps of a 2D material Schottky diode.•A simple model of horizontal depletion width of the lateral metal-2D semiconductor Schottky junction.•Horizontal depletion width visually represented by photocurrent mapping.•Horizontal turn-on voltage as the horizontal built-in voltage. A simple method for obtaining the charge carrier density of two-dimensional (2D) materials is proposed herein. A formula is suggested for the extraction of the 2D charge carrier density using the horizontal depletion width, which is visually represented by photocurrent mapping methods. An example of this method is demonstrated using a MoS2 Schottky diode. The results suggest that this method can be useful for a basic analysis of the physical properties of 2D devices.
ISSN:2211-3797
2211-3797
DOI:10.1016/j.rinp.2021.103854