Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop are...

Full description

Saved in:
Bibliographic Details
Published in:Radioengineering 2013-04, Vol.22 (1), p.132-135
Main Authors: Z. Biolek, D. Biolek, V. Biolkova
Format: Article
Language:English
Subjects:
Memory element
memristor
pinched hysteresis loop
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.
ISSN:1210-2512