Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel

A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low operating voltages (2.3 V@4 V, 3.1 V@5 V and 3.6...

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Bibliographic Details
Published in:Electronics letters 2021-12, Vol.57 (25), p.992-994
Main Authors: Zhang, Zhaohao, Liu, Yaoguang, Wei, Qianhui, Zhang, Qingzhu, Li, Junjie, Wei, Feng, Wu, Zhenhua, Yin, Huaxiang
Format: Article
Language:English
Subjects:
Electrical/electronic equipment (energy utilisation)
Field effect transistors
Insulated gate field effect transistors
Memory circuits
Memory devices
Molybdenum disulfide
Other field effect devices
Retention
Semiconductor devices
Semiconductor storage
Trapping
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Description
Summary:A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low operating voltages (2.3 V@4 V, 3.1 V@5 V and 3.6 V@6 V), which distinctly outperform previously reported CTMs. In addition, high programming/erase (P/E) speeds, good data retention and endurance characteristics are experimentally demonstrated. The results demonstrate a feasibility of CTM FET with an HfGdO charge trapping layer and thin MoS2 channel for ultra‐low power memory devices application.
ISSN:0013-5194
1350-911X
DOI:10.1049/ell2.12333