Growth of AlGaN Film on Si (111) Substrate

At present, the applications of AlxGa1−xN are extensive, such as for visible-blind ultraviolet detectors, laser diodes, light emitting diodes (LEDs) and HEMTs. In this paper, Al0.25Ga0.75N and Al0.32Ga0.68N films have been grown on 2 in Si (iii) substrates by MOCVD. The low-temperature (6 K) photolu...

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Bibliographic Details
Main Authors: Zhang, Yang, Chen, Bingzhen, Peng, Na, Zhang, Lu, Yang, Cuibai, Pan, Xu, Yao, Shun, Wang, Zhiyong
Format: Conference Proceeding
Language:English
Subjects:
Aluminum
Deduction
Light emitting diodes
Low temperature
Nonuniformity
Photoluminescence
Semiconductor lasers
Silicon substrates
Ultraviolet detectors
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Summary:At present, the applications of AlxGa1−xN are extensive, such as for visible-blind ultraviolet detectors, laser diodes, light emitting diodes (LEDs) and HEMTs. In this paper, Al0.25Ga0.75N and Al0.32Ga0.68N films have been grown on 2 in Si (iii) substrates by MOCVD. The low-temperature (6 K) photoluminescence (PL) spectrum and XRD rocking curve measurements have been employed to study the crystal quality of samples, and the phonon replica peak can be observed, which indicate that the samples have better quality in a small-localized region. The surface morphology of samples was investigated by AFM and the result of wavy surface agrees with the deduction from XRD rocking curve measurements. The sheet resistance mappings have been shown, and it indicates the nonuniformity of AlGaN film on Si (iii) will increase sharply as the Al content increases.
ISSN:2261-236X
2274-7214
2261-236X
DOI:10.1051/matecconf/20166106016