Ab initio investigation of electronic and magnetic properties of antiferromagnetic/ferroelectric LaMnO3/BaTiO3 interface

We investigate the structural, electronic and magnetic properties of LaMnO3/BaTiO3 heterostructure by means of ab initio calculations within the GGA+U approach. We consider the heterostructure when ferroelectric polarization in the BaTiO3 film is oriented perpendicular to the LaMnO3 substrate. We pr...

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Bibliographic Details
Published in:Materials research express 2020-05, Vol.7 (5), p.055020
Main Authors: Kabanov, V V, Piyanzina, I I, Lysogorskiy, Yu V, Tayurskii, D A, Mamin, R F
Format: Article
Language:English
Subjects:
Antiferromagnetism
band structure calculations
Barium titanates
Electronic devices
Ferroelectric materials
Ferroelectricity
ferroelectrics
Ferromagnetism
Heterostructures
Lanthanum compounds
Magnetic properties
Magnetism
Mathematical analysis
Polarization (spin alignment)
Substrates
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Summary:We investigate the structural, electronic and magnetic properties of LaMnO3/BaTiO3 heterostructure by means of ab initio calculations within the GGA+U approach. We consider the heterostructure when ferroelectric polarization in the BaTiO3 film is oriented perpendicular to the LaMnO3 substrate. We present atom and spin-resolved density of states calculations for LaMnO3/BaTiO3 heterostructure with different number of BaTiO3 overlayers as well as layer-resolved spectra for the conducting heterostructure. We found that the LaMnO3/BaTiO3 heterostructure becomes conducting with a significant spin polarization indicating that the interface becomes ferromagnetically ordered. The propose concept of a ferroelectrically controlled interface ferromagnetism that offers the possibility to design novel electronic devices.
ISSN:2053-1591
DOI:10.1088/2053-1591/ab940e