A 2D description of the single crystal thin plate growth from the melt by micro- pulling- down method. Part 2

This paper is the second part of a 2D description of a single crystal thin plate growth by micro-pulling-down (µ-PD) method. This part concerns the following aspects: temperature distribution and melt flow in the melt-crystal system (section 2); impurity distribution (section 3). Numerical illustrat...

Full description

Saved in:
Bibliographic Details
Published in:INCAS bulletin 2018-09, Vol.10 (3), p.53-64
Main Authors: Agneta M., BALINT, Stefan, BALINT
Format: Article
Language:English
Subjects:
Crystal growth
Crystal pulling
Impurities
micro-pulling-down method
modelling
Single crystals
Temperature distribution
thin plate growth from the melt
Thin plates
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper is the second part of a 2D description of a single crystal thin plate growth by micro-pulling-down (µ-PD) method. This part concerns the following aspects: temperature distribution and melt flow in the melt-crystal system (section 2); impurity distribution (section 3). Numerical illustration concerning the above aspects are given for the growth of a thin Si plate of 0.0001 [m] by using COMSOL Multiphysics software. The advantage of this description is that it helps in the better understanding of the impurity dispersion in meniscus and may help the improvement of crystal quality.
ISSN:2066-8201
2247-4528
DOI:10.13111/2066-8201.2018.10.3.5