Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

• Published in: Crystals (Basel) 2023-04, Vol.13 (4), p.613
• Main Authors: Valdez-Torija, Eduardo Alejandro, Coyopol, Antonio, García-Salgado, Godofredo, Romano-Trujillo, Román, Morales-Ruiz, Crisóforo, Rosendo-Andrés, Enrique, Vásquez-Agustín, Marco Antonio, Gracia-Jiménez, Justo Miguel, Galeazzi-Isasmendi, Reina, Morales-Morales, Francisco
• Format: Article
• Language: English
• Subjects: Ammonia; Analysis; Arsenic; Chemical processes; Chemical vapor deposition; Crystallography; CSVT; Dielectric films; Diffuse reflectance spectroscopy; Energy dispersive X ray analysis; Film growth; GaAs; Gallium arsenide; Gallium nitrides; Gallium oxides; GaN; Mechanical properties; Methods; Molecular beam epitaxy; Nitriding; Nitrogen; Optical properties; Organic chemicals; Radiation; Raman spectroscopy; Silicon; Silicon substrates; Structure; Thin films; Transistors; Wurtzite; X ray analysis; X-ray diffraction; XRD
• ISSN: 2073-4352; 2073-4352
• DOI: 10.3390/cryst13040613

In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs films were grown at 800, 900, and 1000 ∘C, and the nitridation process was carried out at 900 ∘C with an NH3:H2 gasses ratio. The GaAs films with and without nitridation process were analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). Grazing incidence X-ray diffraction measurements of GaAs films nitrided confirm a polycrystalline GaN wurtzite structure with preferential orientation along (002), and additionality, a crystallographic plane (310) of low intensity is observed in 2θ=52.18∘ corresponding to Ga2O3. The average quantification results in weight (Wt. %) of GaAs films nitrided was determined by EDS; Ga∼79, N∼17.1, O∼2 and As∼1.8 Wt. %. The presence of GaN, GaxOy, Si, and GaAs modes were found by Raman measurements, demonstrating a partial nitriding. The band gap estimation by diffuse reflectance was between 3.2 and 3.38 eV such values are close to that reported for bulk GaN (3.4 eV). The presence of oxygen in the structure could be related to substrates or the GaAs source.