Large tunneling magnetoresistance and its high bias stability in Weyl half-semimetal based lateral magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) based on novel states of two-dimensional (2D) magnetic materials will significantly improve the value of the tunneling magnetoresistance (TMR) ratio. However, most 2D magnetic materials exhibit low critical temperatures, limiting their functionality to lower temperat...

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Bibliographic Details
Published in:New journal of physics 2024-03, Vol.26 (3), p.33047
Main Authors: Tan, Jianing, Yang, Guowei, Ouyang, Gang
Format: Article
Language:English
Subjects:
Bias
Critical temperature
Density functional theory
Electric potential
Electrodes
Electrons
Energy
Green's functions
Heterojunctions
Investigations
lateral magnetic tunnel junction
Lateral stability
Magnetic materials
Magnetoresistance
Magnetoresistivity
Materials selection
Monolayers
Photoelectric effect
Room temperature
spin transport
spintronics
Temperature
Transport properties
Tunnel junctions
Voltage
Weyl half-semimetal
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Summary:Magnetic tunnel junctions (MTJs) based on novel states of two-dimensional (2D) magnetic materials will significantly improve the value of the tunneling magnetoresistance (TMR) ratio. However, most 2D magnetic materials exhibit low critical temperatures, limiting their functionality to lower temperatures rather than room temperature. Moreover, most MTJs experience the decay of TMR ratio at large bias voltages within a low spin injection efficiency (SIE). Here, we construct a series of MTJs with Weyl half-semimetal (WHSM, e.g. MnSiS 3 , MnSiSe 3 , and MnGeSe 3 monolayers) as the electrodes and investigate the spin-dependent transport properties in these kind of lateral heterojunctions by employing density functional theory combined with non-equilibrium Green’s function method. We find that an ultrahigh TMR (∼10 9 %) can be obtained firmly at a small bias voltage and maintains a high SIE even at a large bias voltage, and MnSiSe 3 monolayer is predicted to exhibit a high critical temperature. Additionally, we reveal that the same structure allows for the generation of fully spin-polarized photocurrent, irrespective of the polarization angle. These findings underscore the potential of WHSMs as candidate materials for high-performance spintronic devices.
ISSN:1367-2630
1367-2630
DOI:10.1088/1367-2630/ad345b