Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing

In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the...

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Bibliographic Details
Published in:Membranes (Basel) 2022-01, Vol.12 (1), p.49
Main Authors: Liu, Wei-Sheng, Hsu, Chih-Hao, Jiang, Yu, Lai, Yi-Chun, Kuo, Hsing-Chun
Format: Article
Language:English
Subjects:
Aluminum
Annealing
Argon
Atomic force microscopy
Carrier density
dual-gate thin-film transistor (DG TFT)
Electrodes
Electron mobility
Gallium
Glass substrates
Hall effect
Indium gallium zinc oxide
indium–gallium–zinc oxide (IGZO)
Manufacturing
Mobility
Oxygen
Oxygen plasma
Photoelectron spectroscopy
Photoelectrons
plasma treatment
Polyethylene
Semiconductor devices
Surface roughness
Thin film transistors
Thin films
Threshold voltage
Transistors
Wearable computers
Zinc oxide
Zinc oxides
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Summary:In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the O2 ratio from 16% to 33% in the argon–oxygen plasma treatment mixture. Hall measurement results showed that both the thin-film resistivity and carrier Hall mobility of the Ar–O2 plasma–treated IGZO thin films increased with the reduction of the carrier concentration caused by the decrease in the oxygen vacancy density; this was also verified using X-ray photoelectron spectroscopy measurements. IGZO thin films treated with Ar–O2 plasma were used as channel layers for fabricating DG TFT devices. These DG IGZO TFT devices were subjected to RTA at 100 °C–300 °C for improving the device characteristics; the field-effect mobility, subthreshold swing, and ION/IOFF current ratio of the 33% O2 plasma–treated DG TFT devices improved to 58.8 cm2/V·s, 0.12 V/decade, and 5.46 × 108, respectively. Long-term device stability reliability tests of the DG IGZO TFTs revealed that the threshold voltage was highly stable.
ISSN:2077-0375
2077-0375
DOI:10.3390/membranes12010049