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Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation
This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, P...
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Published in: | TheScientificWorld 2014-01, Vol.2014 (2014), p.1-5 |
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description | This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2. |
doi_str_mv | 10.1155/2014/163414 |
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The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2.</description><identifier>ISSN: 2356-6140</identifier><identifier>ISSN: 1537-744X</identifier><identifier>EISSN: 1537-744X</identifier><identifier>DOI: 10.1155/2014/163414</identifier><identifier>PMID: 25197694</identifier><language>eng</language><publisher>Cairo, Egypt: Hindawi Publishing Corporation</publisher><subject>Architectural engineering ; Circuit design ; Complementary metal oxide semiconductors ; Computer Storage Devices ; Design ; Design and construction ; Equipment and supplies ; Equipment Design - methods ; Methods ; Mixers (Electronics) ; Noise ; Power consumption ; Semiconductors ; Signal Processing, Computer-Assisted - instrumentation ; Technology application ; Topology ; Wireless Technology - instrumentation</subject><ispartof>TheScientificWorld, 2014-01, Vol.2014 (2014), p.1-5</ispartof><rights>Copyright © 2014 Gim Heng Tan et al.</rights><rights>COPYRIGHT 2014 John Wiley & Sons, Inc.</rights><rights>Copyright © 2014 Gim Heng Tan et al. 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This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.</rights><rights>Copyright © 2014 Gim Heng Tan et al. 2014</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c605t-72fec239f65d9cdd24a14a28d175dcea68cbe9b5315fdf4362c805511b78c55b3</citedby><cites>FETCH-LOGICAL-c605t-72fec239f65d9cdd24a14a28d175dcea68cbe9b5315fdf4362c805511b78c55b3</cites><orcidid>0000-0003-3505-6525</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/1555614919/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/1555614919?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,25753,27924,27925,37012,37013,44590,53791,53793,75126</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25197694$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><contributor>Li, Changzhi</contributor><creatorcontrib>Chong, Wei Keat</creatorcontrib><creatorcontrib>Ramiah, H.</creatorcontrib><creatorcontrib>Sidek, Roslina Mohd</creatorcontrib><creatorcontrib>Tan, Gim Heng</creatorcontrib><creatorcontrib>Lioe, De Xing</creatorcontrib><title>Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation</title><title>TheScientificWorld</title><addtitle>ScientificWorldJournal</addtitle><description>This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. 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subjects | Architectural engineering Circuit design Complementary metal oxide semiconductors Computer Storage Devices Design Design and construction Equipment and supplies Equipment Design - methods Methods Mixers (Electronics) Noise Power consumption Semiconductors Signal Processing, Computer-Assisted - instrumentation Technology application Topology Wireless Technology - instrumentation |
title | Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation |
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