Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers

Vertical geometry NiO/Ga2O3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers fabricated on the same wafer and each with the same diameter (100 μm) were operated at 77–473 K to compare their capabilities in space-like environments. The HJ rectifiers suffer a 4-order reduction in forward c...

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Bibliographic Details
Published in:AIP advances 2024-10, Vol.14 (10), p.105326-105326-9
Main Authors: Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Li, Jian-Sian, Labed, Madani, Park, Jang Hyeok, Rim, You Seung, Ren, Fan, Pearton, Stephen J.
Format: Article
Language:English
Subjects:
Carrier mobility
Cryoforming
Cryogenic temperature
Current carriers
Gallium oxides
Heterojunctions
High temperature
Nickel oxides
Recovery time
Rectifiers
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Summary:Vertical geometry NiO/Ga2O3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers fabricated on the same wafer and each with the same diameter (100 μm) were operated at 77–473 K to compare their capabilities in space-like environments. The HJ rectifiers suffer a 4-order reduction in forward current at 77 K due to the freeze-out of acceptors in the NiO, leading to MIS-type operation. By sharp contrast, the Schottky rectifiers have higher forward current and lower on-resistance at 77 K compared to 298 K due to improved carrier mobility. The on/off ratio of Schottky rectifiers at 77 K becomes similar to HJ rectifiers at 298–473 K. The reverse recovery time of Schottky rectifiers is reduced from 20 ns at 273 K to 16 ns at 77 K, while HJ rectifiers cannot be switched at this temperature. While the latter are superior for high-temperature applications, the former are better suited to cryogenic operation.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0233627