Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes

s Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-pe...

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Bibliographic Details
Published in:npj computational materials 2021-07, Vol.7 (1), p.1-11, Article 122
Main Authors: Jung, Sung-Min, Lee, Tae Hoon, Bang, Sang Yun, Han, Soo Deok, Shin, Dong-Wook, Lee, Sanghyo, Choi, Hyung Woo, Suh, Yo-Han, Fan, Xiang-Bing, Jo, Jeong-Wan, Zhan, Shijie, Yang, Jiajie, Samarakoon, Chatura, Kim, Yoonwoo, Occhipinti, Luigi G., Amaratunga, Gehan, Kim, Jong Min
Format: Article
Language:English
Subjects:
639/301/1019/1020
639/624/1020
639/766/1130
Carrier injection
Characterization and Evaluation of Materials
Charge injection
Charge simulation
Charge transport
Chemistry and Materials Science
Computational Intelligence
Computer applications
Current carriers
Electric fields
Interfaces
Light emitting diodes
Materials Science
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mathematical Modeling and Industrial Mathematics
Mathematical models
Optical properties
Quantum dots
Quantum efficiency
Theoretical
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Summary:s Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-performance QD-LEDs. Meanwhile, the charge-carrier dynamics in QD-LED devices, which constitutes the remaining core research area for further improvement of QD-LEDs, is, however, poorly understood yet. Here, we propose a charge transport model in which the charge-carrier dynamics in QD-LEDs are comprehensively described by computer simulations. The charge-carrier injection is modelled by the carrier-capturing process, while the effect of electric fields at their interfaces is considered. The simulated electro-optical characteristics of QD-LEDs, such as the luminance, current density and external quantum efficiency (EQE) curves with varying voltages, show excellent agreement with experiments. Therefore, our computational method proposed here provides a useful means for designing and optimising high-performance QD-LED devices.
ISSN:2057-3960
2057-3960
DOI:10.1038/s41524-021-00591-9