Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As pr...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2024, Vol.12, p.399-406
Main Authors: Current, Michael I., Sakaguchi, Takuya, Kawasaki, Yoji, Samu, Viktor, Pongracz, Anita, Sinko, Luca, Kerekes, Arpad, Durko, Zsolt
Format: Article
Language:English
Subjects:
Annealing
Carrier recombination
Damage
Electron devices
Implants
Ion channeling
Ions
Laser beams
Monte Carlo ion range profiles
Photoluminescence
photoluminescence,secondary ion mass spectroscopy
secondary ion mass spectroscopy
Silicon
spreading resistance profiling
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Summary:This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious "intermittencies" were seen in the PL signals from MeV implant defect centers.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2024.3379328