Difference-frequency generation in optically poled silicon nitride waveguides

• Published in: Nanophotonics (Berlin, Germany) Germany), 2021-05, Vol.10 (7), p.1923-1930
• Main Authors: Sahin, Ezgi, Zabelich, Boris, Yakar, Ozan, Nitiss, Edgars, Liu, Junqiu, Wang, Rui N., Kippenberg, Tobias J., Brès, Camille-Sophie
• Format: Article
• Language: English
• Subjects: all-optical poling; Coherent light; Conversion; Deoxidizing; difference-frequency generation; integrated optics; Nonlinearity; Photonics; Platforms; Second harmonic generation; second-order nonlinearity; Silicon nitride; Waveguides; Wavelengths
• ISSN: 2192-8614; 2192-8606; 2192-8614
• DOI: 10.1515/nanoph-2021-0080

Difference-frequency generation (DFG) is elemental for nonlinear parametric processes such as optical parametric oscillation and is instrumental for generating coherent light at long wavelengths, especially in the middle infrared. Second-order nonlinear frequency conversion processes like DFG require a second-order susceptibility , which is absent in centrosymmetric materials, e.g. silicon-based platforms. All-optical poling is a versatile method for inducing an effective in centrosymmetric materials through periodic self-organization of charges. Such all-optically inscribed grating can compensate for the absence of the inherent second-order nonlinearity in integrated photonics platforms. Relying on this induced effective in stoichiometric silicon nitride (Si ) waveguides, second-order nonlinear frequency conversion processes, such as second-harmonic generation, were previously demonstrated. However up to now, DFG remained out of reach. Here, we report both near- and non-degenerate DFG in all-optically poled Si waveguides. Exploiting dispersion engineering, particularly rethinking how dispersion can be leveraged to satisfy multiple processes simultaneously, we unlock nonlinear frequency conversion near 2 μm relying on all-optical poling at telecommunication wavelengths. The experimental results are in excellent agreement with theoretically predicted behaviours, validating our approach and opening the way for the design of new types of integrated sources in silicon photonics.