InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unip...

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Bibliographic Details
Published in:Micromachines (Basel) 2020-10, Vol.11 (11), p.958
Main Authors: Ting, David Z., Rafol, Sir B., Khoshakhlagh, Arezou, Soibel, Alexander, Keo, Sam A., Fisher, Anita M., Pepper, Brian J., Hill, Cory J., Gunapala, Sarath D.
Format: Article
Language:English
Subjects:
InAs/InAsSb
infrared detector
mid-wavelength infrared (MWIR)
Review
type-II superlattice
unipolar barrier
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Summary:The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi11110958