F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regi...

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Bibliographic Details
Published in:Micromachines (Basel) 2019-11, Vol.10 (11), p.760
Main Authors: Yun, Seunghyun, Oh, Jeongmin, Kang, Seokjung, Kim, Yoon, Kim, Jang Hyun, Kim, Garam, Kim, Sangwan
Format: Article
Language:English
Subjects:
band-to-band tunneling
CAD
Computer aided design
corner effect
Design optimization
Design parameters
electric field crowding
Electric fields
Field effect transistors
Influence
l-shaped tfet
line tunneling
Semiconductor devices
Transistors
tunnel field-effect transistor (tfet)
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Summary:In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage ( ) maintaining high on-state current ( ) and low subthreshold swing ( ) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher and 7 mV/dec smaller average with the same as that for L-shaped TFET.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi10110760