An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two parallel gates, and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and so...

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Bibliographic Details
Published in:IEEE access 2023-01, Vol.11, p.1-1
Main Authors: Jaiswal, Nilesh Kumar, Ramakrishnan, V. N.
Format: Article
Language:English
Subjects:
CAD
Computer aided design
Computer architecture
Design optimization
Doping
Drift
Electric fields
Energy conversion
Gallium nitride
Gallium nitrides
Logic gates
MOSFET
MOSFETs
on-resistance
Performance evaluation
Semiconductor process modeling
split gate
Switching
Switching loss
TCAD
trench MOSFET
Vertical GaN
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Summary:This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two parallel gates, and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and source. Technology computer-aided design (TCAD) simulator was used in the design process to achieve a specific on-resistance as low as 0.79 mΩ.cm 2 for the device, which has the capacity of blocking voltages up to 600 V. The peak electric field of the PSGT-MOSFET could well be lowered to 2.95 MV/cm, which is about 17% lower than that of a conventional trench gate MOSFET (TG-MOSFET) near the trench corner with help of suitable design and optimization of trench depth, drift doping, and field plate thickness. The TCAD simulation shows that the higher drift doping on the device performance of PSGT-MOSFET produces ~2× lower switching losses when compared with a similarly rated conventional TG-MOSFET device.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2023.3265477