Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are...

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Bibliographic Details
Published in:Nanoscale research letters 2018-10, Vol.13 (1), p.316-8, Article 316
Main Authors: Zhong, Hao, Ilyas, Nasir, Song, Yuhao, Li, Wei, Jiang, Yadong
Format: Article
Language:English
Subjects:
Absorptance
Absorptivity
Band gap
Black silicon
Chemistry and Materials Science
Device responsivity
Energy gap
Etching
I.R. radiation
Ion etching
Ion implantation
Light absorptance
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Near infrared radiation
Reactive ion etching
Reflectance
Silicon
Submerging
Sulfur
Surface chemistry
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Summary:Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are used to fabricate microstructured black silicon on the surface of C-Si. These improved surfaces doped with sulfur elements realize a narrower band gap and an enhancement of light absorptance, especially in the near-infrared range (800 to 2000 nm). Meanwhile, the maximum light absorptance increases significantly up to 83%. A Si-PIN photoelectronic detector with microstructured black silicon at the back surface exhibits remarkable device performance, leading to a responsivity of 0.53 A/W at 1060 nm. This novel microstructured black silicon, combining narrow band gap characteristic, could have a potential application in near-infrared photoelectronic detection.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-018-2741-9