A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source we...

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Bibliographic Details
Published in:AIP advances 2016-03, Vol.6 (3), p.035216-035216-8
Main Authors: Halim, Mohammad Abdul, Islam, Muhammad Monirul, Luo, Xianjia, Sakurai, Takeaki, Sakai, Noriyuki, Kato, Takuya, Sugimoto, Hiroki, Tampo, Hitoshi, Shibata, Hajime, Niki, Shigeru, Akimoto, Katsuhiro
Format: Article
Language:English
Subjects:
Bias
Carrier recombination
Comparative studies
Copper indium gallium selenides
Current carriers
Decay
Electroluminescence
Photoluminescence
Photovoltaic cells
Radiative recombination
Selenides
Separation
Solar cells
Temperature dependence
Thin films
Time dependence
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Summary:A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent V OC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4944911