Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems

We report improved sensitivity to NO, NO₂ and NH₃ gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. W...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2016-02, Vol.16 (3), p.273-273
Main Authors: Halfaya, Yacine, Bishop, Chris, Soltani, Ali, Sundaram, Suresh, Aubry, Vincent, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah
Format: Article
Language:English
Subjects:
AlGaN/GaN heterostructure
Ammonia
automotive exhaust line
Condensed Matter
Devices
Dynamical systems
Gallium nitrides
gas sensor
Gases
HEMT transistor
High electron mobility transistors
Materials Science
Nitrogen dioxide
NOx and NH3
Physics
Pollutants
Pollution abatement
Response time
Semiconductor devices
Sensors
Temperature
Transistors
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Summary:We report improved sensitivity to NO, NO₂ and NH₃ gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO₂ and 15 ppm-NH₃ is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.
ISSN:1424-8220
1424-8220
DOI:10.3390/s16030273