Properties of Thermally Evaporated Titanium Dioxide as an Electron-Selective Contact for Silicon Solar Cells

Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation. This study focuses on characterizing an electron-selective pa...

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Bibliographic Details
Published in:Energies (Basel) 2020-02, Vol.13 (3), p.678
Main Authors: Lee, Changhyun, Bae, Soohyun, Park, HyunJung, Choi, Dongjin, Song, Hoyoung, Lee, Hyunju, Ohshita, Yoshio, Kim, Donghwan, Kang, Yoonmook, Lee, Hae-Seok
Format: Article
Language:English
Subjects:
Annealing
band alignment
Carrier lifetime
carrier-selective contact cell
Chemical composition
Conduction
Efficiency
electron-selective contact
Evaporation
Lifetime
Metal oxides
Offsets
Open circuit voltage
Oxidation
Oxide coatings
Photoelectron spectroscopy
Photoelectrons
Photovoltaic cells
Quality
Selectivity
Silicon
Silicon dioxide
Silicon wafers
Solar cells
Spectroscopy
Spectrum analysis
Titanium
Titanium dioxide
titanium oxide
Titanium oxides
Transmission electron microscopy
Valence band
X-ray diffraction
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Summary:Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation. This study focuses on characterizing an electron-selective passivated contact layer with this oxidized method. Subsequently, the SiO2/TiO2 stack was examined using high-resolution transmission electron microscopy. The phase and chemical composition of the titanium oxide films were analyzed using X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The passivation quality of each layer was confirmed by measuring the carrier lifetime using quasi-steady-state photoconductance, providing an implied open circuit voltage of 644 mV. UV–vis spectroscopy and UV photoelectron spectroscopy analyses demonstrated the band alignment and carrier selectivity of the TiO2 layers. Band offsets of ~0.33 and ~2.6 eV relative to the conduction and valence bands, respectively, were confirmed for titanium oxide and the silicon interface.
ISSN:1996-1073
1996-1073
DOI:10.3390/en13030678