In situ Tuning of the Electric-Dipole Strength of a Double-Dot Charge Qubit: Charge-Noise Protection and Ultrastrong Coupling

Semiconductor quantum dots in which electrons or holes are isolated via electrostatic potentials generated by surface gates are promising building blocks for semiconductor-based quantum technology. Here, we investigate double-quantum-dot (DQD) charge qubits in GaAs capacitively coupled to high-imped...

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Bibliographic Details
Published in:Physical review. X 2022-07, Vol.12 (3), p.031004, Article 031004
Main Authors: Scarlino, P., Ungerer, J. H., van Woerkom, D. J., Mancini, M., Stano, P., Müller, C., Landig, A. J., Koski, J. V., Reichl, C., Wegscheider, W., Ihn, T., Ensslin, K., Wallraff, A.
Format: Article
Language:English
Subjects:
Arrays
Capacitance
Coherence
Configurations
Dipole interactions
Dipole moments
Electric dipoles
Electrons
Gates
High impedance
Quantum dots
Qubits (quantum computing)
Resonators
Substrates
Superconducting quantum interference devices
Superconductivity
Tuning
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Summary:Semiconductor quantum dots in which electrons or holes are isolated via electrostatic potentials generated by surface gates are promising building blocks for semiconductor-based quantum technology. Here, we investigate double-quantum-dot (DQD) charge qubits in GaAs capacitively coupled to high-impedance superconducting quantum interference device array and Josephson-junction array resonators. We tune the strength of the electric-dipole interaction between the qubit and the resonator in situ using surface gates. We characterize the qubit-resonator coupling strength, the qubit decoherence, and the detuning noise affecting the charge qubit for different electrostatic DQD configurations. We find all quantities to be systematically tunable over more than one order of magnitude, resulting in reproducible decoherence ratesΓ2/2π
ISSN:2160-3308
2160-3308
DOI:10.1103/PhysRevX.12.031004