Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a q...

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Bibliographic Details
Published in:Photonics 2020-09, Vol.7 (3), p.68
Main Authors: Dehzangi, Arash, Wu, Donghai, McClintock, Ryan, Li, Jiakai, Jaud, Alexander, Razeghi, Manijeh
Format: Article
Language:English
Subjects:
implantation energy
ion implantation
planar structure
quantum efficiency
type II superlattice
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Summary:In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.
ISSN:2304-6732
2304-6732
DOI:10.3390/photonics7030068