Low-temperature synthesis and growth model of thin Mo2C crystals on indium

Chemical vapor deposition is a promising technique to produce Mo 2 C crystals with large area, controlled thickness, and reduced defect density. Typically, liquid Cu is used as a catalyst substrate; however, its high melting temperature (1085 °C) prompted research groups to search for alternatives....

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2021-04, Vol.11 (1), p.8247-8247, Article 8247
Main Authors: Caylan, Omer Refet, Cambaz Buke, Goknur
Format: Article
Language:English
Subjects:
639/301/119
639/301/357
Catalysts
Crystals
Etching
Growth models
Humanities and Social Sciences
Low temperature
multidisciplinary
Raman spectroscopy
Science
Science (multidisciplinary)
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Chemical vapor deposition is a promising technique to produce Mo 2 C crystals with large area, controlled thickness, and reduced defect density. Typically, liquid Cu is used as a catalyst substrate; however, its high melting temperature (1085 °C) prompted research groups to search for alternatives. In this study, we report the synthesis of large-area thin Mo 2 C crystals at lower temperatures using liquid In, which is also advantageous with respect to the transfer process due to its facile etching. SEM, EDS, Raman spectroscopy, XPS, and XRD studies show that hexagonal Mo 2 C crystals, which are orthorhombic, grow along the [100] direction together with an amorphous carbon thin film on In. The growth mechanism is examined and discussed in detail, and a model is proposed. AFM studies agree well with the proposed model, showing that the vertical thickness of the Mo 2 C crystals decreases inversely with the thickness of In for a given reaction time.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-87660-7