Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar InGaN/GaN Multi-Quantum Wells

Surface undulation was formed while growing InGaN/GaN multi-quantum wells on a semi-polar m-plane (1–100) sapphire substrate. Two distinct facets, parallel to (112¯2) and (011¯1), were formed in the embedded multi-quantum wells (MQWs). The structural and luminescence characteristics of the two facet...

Full description

Saved in:
Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2023-06, Vol.13 (13), p.1946
Main Authors: Sheen, Mi-Hyang, Lee, Yong-Hee, Jang, Jongjin, Baek, Jongwoo, Nam, Okhyun, Yang, Cheol-Woong, Kim, Young-Woon
Format: Article
Language:English
Subjects:
Analysis
Cathodoluminescence
Electron microscopy
Gallium compounds
Indium
indium concentration
Methods
Nitrides
Optical properties
Quantum wells
semi-polar GaN
Structure
surface undulation
TEM-cathodoluminescence
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Surface undulation was formed while growing InGaN/GaN multi-quantum wells on a semi-polar m-plane (1–100) sapphire substrate. Two distinct facets, parallel to (112¯2) and (011¯1), were formed in the embedded multi-quantum wells (MQWs). The structural and luminescence characteristics of the two facets were investigated using transmission electron microscopy equipped with cathodoluminescence. Those well-defined quantum wells, parallel and slanted to the growth plane, showed distinct differences in indium incorporation from both the X-ray yield and the contrast difference in annular darkfield images. Quantitative measurements of concentration in (011¯1) MQWs show an approximately 4 at% higher indium incorporation compared to the corresponding (112¯2) when the MQWs were formed under the same growth condition.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano13131946