Photoactive Properties of Transport Sol-Gel Layers Based on Strontium Titanate for Perovskite Solar Cells

In this work, we have investigated the photocurrent and spectral sensitivity of the silicon/SrTiO3:xNb/perovskite structures. The sol–gel method carried out the deposition of undoped SrTiO3 layers as well as niobium-doped (SrTiO3:Nb) layers at atomic concentrations of 3 and 6% Nb. The perovskite lay...

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Published in:Photonics 2023-07, Vol.10 (7), p.845
Main Authors: Semchenko, Alina V., Ayvazyan, Gagik Y., Malyutina-Bronskaya, Viktoriya V., Khakhomov, Sergei A., Kovalenko, Dmitry L., Boiko, Andrei A., Sidski, Vitali V., Nestsiaronak, Anton V., Mayevsky, Alexander A., Danilchenko, Konstantin D., Zhigulin, Dmitry V., Pilipenko, Vladimir A., Subasri, R., Gaponenko, Nikolai V.
Format: Article
Language:English
Subjects:
Analysis
Annealing
Crystal oscillators
Dielectric properties
Evaporation
Iodine
Lasers
Niobium
Perovskite
Perovskites
photoactivity
Photoelectric effect
Photoelectric emission
Photosensitivity
Photovoltaic cells
Radiation
Reagents
Scanning electron microscopy
Semiconductor lasers
Silicon
Silicon wafers
sol-gel
Sol-gel processes
Solar batteries
Solar cells
Spectral sensitivity
Strontium
strontium titanate
Strontium titanates
Temperature
Titanium
Volt-ampere characteristics
Wavelengths
X-ray diffraction
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Summary:In this work, we have investigated the photocurrent and spectral sensitivity of the silicon/SrTiO3:xNb/perovskite structures. The sol–gel method carried out the deposition of undoped SrTiO3 layers as well as niobium-doped (SrTiO3:Nb) layers at atomic concentrations of 3 and 6% Nb. The perovskite layer, CH3NH3PbI3−xClx, has been deposited by the vacuum co-evaporation technique. The layers have been characterized by scanning electron microscopy and X-ray diffraction measurements. The volt–ampere characteristics and spectral sensitivity of the fabricated samples have been measured under illumination with selective wavelengths of 405, 450, 520, 660, 780, 808, 905, 980, and 1064 nm of laser diodes. We have shown that for different configurations of applied voltage between silicon, SrTiO3:xNb, and CH3NH3PbI3−xClx, the structures are photosensitive ones with a variation of photocurrent from microamperes to milliamperes depending on Nb concentration in SrTiO3, and the highest photocurrent and spectral sensitivity values are observed when a SrTiO3:Nb layer with 3 at.% of Nb is used. A possible application of the proposed structure with a SrTiO3:Nb layer for perovskite solar cells and photodetectors is being discussed.
ISSN:2304-6732
2304-6732
DOI:10.3390/photonics10070845