Towards a CdTe Solar Cell Efficiency Promotion: The Role of ZnO:Al and CuSCN Nanolayers

A numerical simulation is a valuable tool since it allows the optimization of both time and the cost of experimental processes for time optimization and the cost of experimental processes. In addition, it will enable the interpretation of developed measurements in complex structures, the design and...

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Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2023-04, Vol.13 (8), p.1335
Main Authors: Montoya De Los Santos, Isaac, Pérez-Orozco, Alan A, Liña-Martínez, Diego A, Courel, Maykel, Meza-Avendaño, Carlos A, Borrego-Pérez, Jorge A, Pérez, Laura M, Laroze, David
Format: Article
Language:English
Subjects:
Absorbers
Cadmium tellurides
Capacitance
Carrier density
CdTe solar cell
CuSCN nanolayer
Design optimization
Dielectric films
Efficiency
Interfaces
Mathematical models
Photovoltaic cells
SCAPS
Simulation
Solar cells
Thin films
Work functions
Zinc oxide
ZnO:Al nanolayer
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Summary:A numerical simulation is a valuable tool since it allows the optimization of both time and the cost of experimental processes for time optimization and the cost of experimental processes. In addition, it will enable the interpretation of developed measurements in complex structures, the design and optimization of solar cells, and the prediction of the optimal parameters that contribute to manufacturing a device with the best performance. In this sense, a detailed simulation study was carried out in this work by the Solar Cell Capacitance Simulator (SCAPS). In particular, we evaluate the influence of absorber and buffer thickness, absorber defect density, work function in back contact, R , R , and carrier concentration on a CdTe/CdS cell to maximize its performance. Furthermore, the incorporation effect of ZnO:Al (TCO) and CuSCN (HTL) nanolayers was studied for the first time. As a result, the efficiency of the solar cell was maximized from 16.04% to 17.74% by increasing the J and V . This work will play an essential role in enhancing the performance of CdTe-based devices with the best performance.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano13081335