Review of Voltage Balancing Techniques for Series-Connected SiC Metal–Oxide–Semiconductor Field-Effect Transistors

• Published in: Energies (Basel) 2024-12, Vol.17 (23), p.5846
• Main Authors: Sun, Lucheng, Qiao, Mingzhong, Xia, Yihui, Wu, Bo, Chen, Fulin
• Format: Article
• Language: English
• Subjects: Behavior; Circuits; device in series connection; drive circuit; Electric properties; mathematical model; Metal oxide semiconductor field effect transistors; Optimization; Power supply; Silicon carbide; silicon carbide metal–oxide–semiconductor field-effect transistors; Transistors; voltage balancing technology
• ISSN: 1996-1073; 1996-1073
• DOI: 10.3390/en17235846

Power devices in series are low-voltage power devices used in medium- and high-voltage applications in a more direct program. However, when power devices in series are used, because of their electrical performance parameters or external circuit conditions, there are unique short-circuit voltage imbalances, a serious threat to the safety of the device. The article first summarizes the research status and characteristics of the four models of SiC MOSFETs based on the domestic and international research on the models of SiC MOSFETs in recent years; second, the voltage balancing technology of series-connected SiC MOSFETs is sorted out and summarized, and then the driving circuits of SiC MOSFETs are sorted out and summarized. Again, several voltage balancing techniques reviewed are compared in six different aspects: cost, modularity, complexity, speed of voltage balancing, losses, and effectiveness of voltage balancing. Finally, an outlook of voltage balancing techniques for series SiC MOSFETs is provided.