Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET

• Published in: SN applied sciences 2023-12, Vol.5 (12), p.384-10, Article 384
• Main Authors: Misra, Sarita, Biswal, Sudhansu Mohan, Baral, Biswajit, Pati, Sudhansu Kumar
• Format: Article
• Language: English
• Subjects: Applied and Technical Physics; CAD; Chemistry/Food Science; Compression; Computer aided design; Decibels; Earth Sciences; Engineering; Environment; fmax; Higher order transconductance ( Gm1,Gm2); IIP3; IMD3,P1dB,intrinsic gain,fT; Investigations; Linearity; Materials Science; MOSFETs; Nanotechnology devices; Nanowires; Nonlinear systems; Power gain; Radio frequency; Simulation; System on chip; Threshold voltage; Transconductance; Transistors; Unity; VIP2,VIP3
• ISSN: 2523-3963; 2523-3971
• DOI: 10.1007/s42452-023-05473-x

Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its linearity performance with the help of ATLAS tool of technology computer-aided design. The proposed device is compared systematically with the conventional junstionless surrounded gate MOSFET(JLSG MOSFET) to investigate their linearity. To evaluate the linearity, the figure of merits such as higher-order transconductance (G m1 , G m2 ) , intercept points(VIP 2 , VIP 3 , IIP 3 ), IMD 3 and 1 dB—compression point(P1 dB) are considered. The linearity of our proposed device improves by 35.5% in view of the compression point in comparison to JLSG MOSFET before the threshold voltage region of operation. The simulation results reveal a substantial enhancement in the linearity performance of the JLSGGC MOSFET. The improved linearity behavior of JLSGGC MOSFET makes it suitable for wireless RF and system-on-chip applications.Analog/RF performance is studied in terms of intrinsic gain (G m /G ds ), cut-off frequency (f T ),maximum frequency of oscillation (f max ).Improved analog/RF performances of JLSGGC MOSFET suggests its applications in high frequency operating range. Article Highlights Linearity is an important issue that need to be resolved before employing the nano MOSFETs for high frequency radio applications.It is assessed through certain key factors which determine the level of distortion present in the said device. The key factor quantifies what should be the maximum input with in which the device should operate without reducing its gain by 1 decibel unit The impact of graded channel architechure on the linearity of the proposed device is explored by comparing the key performance factors between graded and ungraded structures of junctionless surrounded gate MOSFETs Systematic Comparison of gain , unity current gain frequency(f T ) ,unity power gain frequency (f max ) are performed to find the suitability for anlog/RF applications of the JLSGGC MOSFET.