Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes

We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectrosc...

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Bibliographic Details
Published in:Crystals (Basel) 2019-07, Vol.9 (7), p.328
Main Authors: Capan, Ivana, Yamazaki, Yuichi, Oki, Yuya, Brodar, Tomislav, Makino, Takahiro, Ohshima, Takeshi
Format: Article
Language:English
Subjects:
Boron
Carbon
Carrier traps
Chemical vapor deposition
defects
Energy
Energy levels
MCTS
Minority carriers
minority traps
Position measurement
Radiation
SBD
Schottky diodes
Silicon carbide
Thin films
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Summary:We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron-related defects.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst9070328