Effects of Organic Compounds on Microstructure, Optical, and Electrical Properties of ITO Thin Films Prepared by Dip-Coating Method

Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400°C and 600°C in 3% H2/97% N2 mixtures atmosphere. Microstructure, optical, and electrical properti...

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Bibliographic Details
Published in:Advances in materials science and engineering 2012-01, Vol.2012 (2012), p.1-7
Main Authors: Yang, Ru-Yuan, Chu, Cheng-Jye, Peng, Yu-Ming, Chueng, Hui-Ju
Format: Article
Language:English
Subjects:
Annealing
Atmospheres
Dip coatings
Electrical properties
Indium tin oxide
Microstructure
Optical properties
Thin films
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Summary:Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400°C and 600°C in 3% H2/97% N2 mixtures atmosphere. Microstructure, optical, and electrical properties of the prepared ITO films were investigated in detail. The maximum transmittance in the visible range (380–780 nm) is 85.6%, and the best resistivity is 5×10−2 Ω-cm when annealed at 600°C in 3% H2/97% N2 mixtures atmosphere. It is found that the optical and electrical properties of the prepared ITO films are strongly related to the microstructure variation. The organic compounds could not be removed completely, and the prepared ITO thin films were not dense when the prepared ITO film was annealed at 600°C in 3% H2/97% N2 mixtures atmosphere, causing the poor conductivity.
ISSN:1687-8434
1687-8442
DOI:10.1155/2012/741561