Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam

X-ray topography is a powerful method for analyzing crystal defects and strain in crystalline materials non-destructively. However, conventional X-ray topography uses simple X-ray diffraction images, which means depth information on defects and dislocations cannot be obtained. We have therefor devel...

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Bibliographic Details
Published in:Scientific reports 2023-07, Vol.13 (1), p.12381-12381, Article 12381
Main Authors: Yoneyama, Akio, Ishiji, Kotaro, Sakaki, Atsushi, Kobayashi, Yutaka, Inaba, Masayuki, Fukuda, Kazunori, Konishi, Kumiko, Shima, Akio, Takamatsu, Daiko
Format: Article
Language:English
Subjects:
639/301
639/301/1005
639/301/930
639/624/400/1106
639/766/930/2735
Crystal defects
Dimensional analysis
Geometry
Humanities and Social Sciences
multidisciplinary
Power
Science
Science (multidisciplinary)
Semiconductors
Silicon carbide
Silicon wafers
Tomography
Topography
X-ray diffraction
X-rays
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Summary:X-ray topography is a powerful method for analyzing crystal defects and strain in crystalline materials non-destructively. However, conventional X-ray topography uses simple X-ray diffraction images, which means depth information on defects and dislocations cannot be obtained. We have therefor developed a novel three-dimensional micro-X-ray topography technique (3D μ-XRT) that combines Bragg-case section topography with focused sheet-shaped X-rays. The depth resolution of the 3D μ-XRT depends mainly on the focused X-ray beam size and enables non-destructive observation of internal defects and dislocations with an accuracy on the order of 1 μm. The demonstrative observation of SiC power device chips showed that stacking faults, threading screw, threading edge, and basal plane dislocations were clearly visualized three-dimensionally with a depth accuracy of 1.3 μm. 3D μ-XRT is a promising new approach for highly sensitive and non-destructive analysis of material crystallinity in a three-dimensional manner.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-023-39347-4