High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride

Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexago...

Full description

Saved in:
Bibliographic Details
Published in:Membranes (Basel) 2021-12, Vol.11 (12), p.952
Main Authors: Yue, Dewu, Rong, Ximing, Han, Shun, Cao, Peijiang, Zeng, Yuxiang, Xu, Wangying, Fang, Ming, Liu, Wenjun, Zhu, Deliang, Lu, Youming
Format: Article
Language:English
Subjects:
Aluminum oxide
black phosphorus (BP)
Boron
Boron nitride
Capping
Electron mobility
Graphene
hexagonal boron nitride (h-BN)
Light
n-type
N-type semiconductors
Phosphorus
photodetector
Photometers
Photoresponse
Polymethyl methacrylate
Spectrum analysis
thin film transistors (TFTs)
Transistors
Two dimensional materials
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al O capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm V s , thereby demonstrating n-type behavior. The ambipolar BP devices exhibited ultrafast photodetector behavior with a very high photoresponsivity of 1980 mA/W over the ultraviolet (UV), visible, and infrared (IR) spectral ranges. The h-BN capping process offers a feasible approach to fabricating n-type behavior BP semiconductors and high photoresponse BP photodetectors.
ISSN:2077-0375
2077-0375
DOI:10.3390/membranes11120952