Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depen...

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Bibliographic Details
Published in:Applied sciences 2020-11, Vol.10 (21), p.7935
Main Authors: Atamuratov, Atabek E., Yusupov, Ahmed, Atamuratova, Zukhra A., Chedjou, Jean Chamberlain, Kyamakya, Kyandoghere
Format: Article
Language:English
Subjects:
Bias
Capacitance
Carrier injection
degradation
Dependence
Electrical junctions
Injection
lateral transition capacitance
local charge
MOSFET
MOSFETs
Simulation
Substrates
threshold voltage
Transistors
Trapped charge
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Summary:In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depends on the linear size of the trapped charge. The dependence of the difference between drain–substrate and source–substrate capacitances on the linear size of trapped charges is also simulated. The revealed dependence can be used in measurements to estimate the linear size of oxide trapped charges induced by hot carrier injection, which can occur during MOSFET operation at defined conditions.
ISSN:2076-3417
2076-3417
DOI:10.3390/app10217935