Research on the Gate Oxide Layer Aging Trend of Power Electronic Device

• Published in: IEEE access 2021, Vol.9, p.48474-48482
• Main Authors: Xu, Guoqing, Shao, Lingfeng, Wei, Weiwei, Zhang, Yanhui, Sun, Xuecheng
• Format: Article
• Language: English
• Subjects: accelerated aging experiment; Aging; Algorithms; Capacitance; Component reliability; Electric vehicles; Electronic components; Insulated gate bipolar transistor; Insulated gate bipolar transistors; Logic gates; Mann-Kendall test method; Parameters; Regression analysis; Reliability; stepwise regression algorithm; Switches; Temperature measurement; Thermal analysis; Thermal resistance
• ISSN: 2169-3536; 2169-3536
• DOI: 10.1109/ACCESS.2021.3062465

The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT). At present, only the transient thermal resistance curve in the datasheet and the initial thermal model of the experimental test are used to evaluate the life of the IGBT module, while it is well known that IGBT parameters are affected by its degree of aging. Thus, the development of research for the aging process of IGBT is of key importance. The aging process of IGBT is proposed to be a gradual aging process, verified by the accelerated aging experiment. Firstly, the mechanism between the relevant aging parameters and the degree of IGBT aging is studied in this paper. Secondly, the switching parameters in different degrees of aging are measured and compared by accelerated experiments. Finally, the stepwise linear regression algorithm is used to screen parameters and the Mann-Kendall test method is used to analyze the IGBT aging process curve. The results show that the aging process of IGBT is gradual, and the aging process model of IGBT is finally established. On this basis, the remaining using life of IGBT can be accurately measured.