Control of Columnar Grain Microstructure in CSD LaNiO3 Films

Conductive LaNiO3 (LNO) films with an ABO3 perovskite structure deposited on silicon wafers are a promising material for various electronics applications. The creation of a well-defined columnar grain structure in CSD (Chemical Solution Deposition) LNO films is challenging to achieve on an amorphous...

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Bibliographic Details
Published in:Molecules (Basel, Switzerland) Switzerland), 2023-02, Vol.28 (4), p.1938
Main Authors: Atanova, Aleksandra V., Seregin, Dmitry S., Zhigalina, Olga M., Khmelenin, Dmitry N., Orlov, Georgy A., Turkina, Daria I., Sigov, Alexander S., Vorotilov, Konstantin A.
Format: Article
Language:English
Subjects:
Annealing
Baking
chemical solution deposition
Coalescence
Columnar structure
Crystallites
Crystallization
Crystals
Deposition
Film growth
Grain growth
Grain structure
High temperature
lanthanum nickelate
Lanthanum oxides
lead zirconate-titanate
Molecular beam epitaxy
Perovskite structure
Perovskites
Silicon dioxide
Silicon substrates
Silicon wafers
Substrates
thin films
transmission electron microscopy
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Summary:Conductive LaNiO3 (LNO) films with an ABO3 perovskite structure deposited on silicon wafers are a promising material for various electronics applications. The creation of a well-defined columnar grain structure in CSD (Chemical Solution Deposition) LNO films is challenging to achieve on an amorphous substrate. Here, we report the formation of columnar grain structure in LNO films deposited on the Si-SiO2 substrate via layer-by-layer deposition with the control of soft-baking temperature and high temperature annealing time of each deposited layer. The columnar structure is controlled not by typical heterogeneous nucleation on the film/substrate interface, but by the crystallites’ coalescence during the successive layers’ deposition and annealing. The columnar structure of LNO film provides the low resistivity value ρ~700 µOhm·cm and is well suited to lead zirconate-titanate (PZT) film growth with perfect crystalline structure and ferroelectric performance. These results extend the understanding of columnar grain growth via CSD techniques and may enable the development of new materials and devices for distinct applications.
ISSN:1420-3049
1420-3049
DOI:10.3390/molecules28041938