A CMOS pressure sensor tag chip for passive wireless applications

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer r...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2015-03, Vol.15 (3), p.6872-6884
Main Authors: Deng, Fangming, He, Yigang, Li, Bing, Zuo, Lei, Wu, Xiang, Fu, Zhihui
Format: Article
Language:English
Subjects:
Aluminum
Antennas
capacitive sensor interface
CMOS
CMOS process
Electric potential
Electrodes
Power dissipation
pressure sensor
Pressure sensors
Radio frequency identification
Radio Frequency Identification Device - methods
rectifier
Rectifiers
Remote Sensing Technology
RFID technology
Semiconductors
Sensors
Signal Processing, Computer-Assisted
Systems design
Voltage
Wireless Technology
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Summary:This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of -20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.
ISSN:1424-8220
1424-8220
DOI:10.3390/s150306872