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Exploring Eu3+-doped ZnO-SiO2 glass derived by recycling renewable source of waste rice husk for white-LEDs application

•White rice husk ash was used to produce zinc silicate glass system (ZnO-SiO2).•The addition of europium ions (Eu3+) had reduced the surface porosity.•Intense red emission exhibited at 600 nm under the excitation wavelength of 400 nm. In this work, zinc silicate glass system (ZnO-SiO2) doped with va...

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Bibliographic Details
Published in:Results in physics 2019-12, Vol.15, p.102596, Article 102596
Main Authors: Khaidir, Rahayu Emilia Mohamed, Fen, Yap Wing, Zaid, Mohd Hafiz Mohd, Matori, Khamirul Amin, Omar, Nur Alia Sheh, Anuar, Muhammad Fahmi, Wahab, Siti Aisyah Abdul, Azman, Aisyah Zakiah Khirel
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Language:English
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Summary:•White rice husk ash was used to produce zinc silicate glass system (ZnO-SiO2).•The addition of europium ions (Eu3+) had reduced the surface porosity.•Intense red emission exhibited at 600 nm under the excitation wavelength of 400 nm. In this work, zinc silicate glass system (ZnO-SiO2) doped with various europium ion (Eu3+) concentrations derived from white rice husk ash (WRHA) were synthesized using melt and quench method. All samples determined by X-ray diffractometer (XRD) showed amorphous phase structure. The surface micrographs detected by Field emission scanning electron microscopy (FESEM) showed Eu3+ addition had reduced the sample’s porosity. Fourier transform infrared (FTIR) revealed the presence of Eu3+ ions had weakened the absorption peaks of SiO4. Meanwhile, ultra-violet visible spectroscopy (UV–vis) showed the absorption edges were shifted towards higher wavelength with Eu3+ addition. Band gap values were increased from 2.97 eV to 4.23 eV when Eu3+ dopant increased but decreased back to 3.98 eV at highest concentration. Photoluminescence spectroscopy (PL) analysis showed intense red emission at 600 nm corresponding to 5D0 → 7F2 transition were enhanced by Eu3+ doping. Hence, their luminescent properties are useful for optical device such as white light emitting diodes.
ISSN:2211-3797
2211-3797
DOI:10.1016/j.rinp.2019.102596